onsemi FCH47N60NF

Name: onsemi FCH47N60NF
Brand: onsemi
SKU: FCH47N60NF

N-Channel Power MOSFET, SUPREMOS®, FRFET®, 600 V, 45.8 A, 65 mΩ, TO-247

EOL

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Distributor	SKU		Min	Pkg
Farnell	FCH47N60NF	0	1		10.552*	10.297*	10.297*	10.297*	10.297*	2h
element14 APAC	FCH47N60NF	0	1		15.103*	8.604*	7.391*	7.250*	7.250*	1d
Microchip USA	FCH47N60NF	239	50	Tray			30.128	30.128	30.128	7d
Win Source	WS-FCH47N60NF	6,600	18				2.586	2.242	2.242	2h
Worldway Electronics	FCH47N60NF	7,411	7	Tube		2.938	2.848	2.698	2.698	1h

Inventory History

3 month trend: -20.51%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCH47N60NF.

Farnell

Datasheet9 pages5 years ago

Datasheet0 pages0 years ago

IHS

onsemi

Factory Futures

element14 APAC

Inventory History

3 month trend:

-20.51%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-12-29

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-09-29

LTD Date2023-03-29

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FCH47N60NF provided by its distributors.

N-Channel Power MOSFET, SUPREMOS®, FRFET®, 600 V, 45.8 A, 65 mΩ, TO-247

onsemi

Power Field-Effect Transistor, 45.8A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

IHS

MOSFET, N CH, 600V, 45.8A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:45.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0575ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:368W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3

Farnell

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Fairchild Semiconductor