STMicroelectronics STP11NK50ZFP
$ 1.2
Production
Inventory History
3 month trend: -8.78%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP11NK50ZFP.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STP11NK50ZFP provided by its distributors.
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 500V 10A TO-220FP
STP11NK50ZFP N-CHANNEL MOSFET TRANSISTOR, 10 A, 500 V, 3-PIN TO-220FP
N-channel 500 V, 0.48 Ohm typ., 10 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
Power MOSFET, N Channel, 500 V, 10 A, 0.52 ohm, TO-220FP, Through Hole
30W(Tc) 30V 4.5V@ 100¦ÌA 68nC@ 10 V 1N 500V 520m¦¸@ 4.5A,10V 10A 1.39nF@25V TO-220FP 20mm
MOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 30 W
500V 10A 520m´Î@10V4.5A 30W 4.5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
N-CHANNEL 500 V-0.48 OHM-10 A TO220FP ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.52ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
Mosfet, N, To-220Fp; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:10A; Tensión Drenaje-Fuente Vds:500V; Resistencia De Activación Rds(On):520Mohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:3.75V |Stmicroelectronics STP11NK50ZFP
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -8.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance520 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.39 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation30 W
Manufacturer Package IdentifierTO-220FP-7012510
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation30 W
Rds On Max520 mΩ
Resistance520 MΩ
Rise Time18 ns
Threshold Voltage3.75 V
Turn-Off Delay Time41 ns
Turn-On Delay Time14.5 ns
Dimensions
Height20 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP11NK50ZFP.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant