STMicroelectronics STF10NK50Z
Obsolete
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-07-07
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2014-01-29
LTD Date2014-07-29
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Descriptions
Descriptions of STMicroelectronics STF10NK50Z provided by its distributors.
N-channel 500 V, 0.55 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
STF10NK50Z N-channel MOSFET Transistor, 10 A, 650 V, 3-Pin TO-220FP
Mosfet Transistor, N Channel, 4.5 A, 500 V, 550 Mohm, 10 V, 3.75 V
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220FP Tube
MOSFET 500V 0.55OHM 9A, TO 220 ISO FULL PACK IN LINE<AZ
Power Field-Effect Transistor, 9A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 500V, 9A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):550mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:9A; Package / Case:TO-220FP; Power Dissipation Pd:30W; Termination Type:Through Hole; Transistor Type:Switching; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance700 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.219 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max700 mΩ
Resistance700 mΩ
Rise Time17 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time43 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)500 V
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant