STMicroelectronics STF3NK80Z
$ 0.908
Production
Inventory History
3 month trend: +2.15%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF3NK80Z.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
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N-Channel 900 V 4.8 Ohm Flange Mount SuperMESH Power Mosfet - TO-220FP
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N-CHANNEL 800V - 3 OHM - 3A TO-220FP Zener-Protected SuperMESH(TM) Power MOSFET
Descriptions
Descriptions of STMicroelectronics STF3NK80Z provided by its distributors.
N-CHANNEL 800V - 3.8 Ohm - 2.5A TO-220FP Zener-Protected SuperMESH™ Power MOSFET
Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 2.5A TO220FP
N-channel 800 V, 3.8 Ohm typ., 2.5 A SuperMESH Power MOSFET in TO-220FP package
Ciiva
Power MOSFET, N Channel, 800 V, 2.5 A, 4.5 ohm, TO-220FP, Through Hole
25W(Tc) 30V 4.5V@ 50¦ÌA 19nC@ 10 V 1N 800V 4.5¦¸@ 1.25A,10V 2.5A 485pF@25V TO-220FP 20mm
MOSFET N-Ch 800V 2.5A SuperMESH TO220FP
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 4.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
Mosfet, N, To-220Fp; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:2.5A; Tensión Drenaje-Fuente Vds:800V; Resistencia De Activación Rds(On):4.5Ohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:3.75V |Stmicroelectronics STF3NK80Z
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +2.15%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance4.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance485 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation25 W
Rds On Max4.5 Ω
Resistance4.5 Ω
Rise Time27 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time36 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)800 V
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF3NK80Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant