onsemi FQPF2N60C

Name: onsemi FQPF2N60C
Brand: onsemi
SKU: FQPF2N60C

Power Mosfet, N-channel, Qfet®, 600 V, 2 A, 4.7 Ω, TO-220F

$ 0.697

EOL

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min
Avnet		FQPF2N60C	10,455	910				0.733	0.699	4d
Verical	5	FQPF2N60C	4,172	447				0.697	0.621
Rochester Electronics	2	FQPF2N60C	12,360				0.671	0.557	0.497	19h
Flip Electronics		FQPF2N60C	10,455							6d
Farnell		FQPF2N60C	0	1	1.635*	1.367*	1.008*	1.008*	1.008*	15h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQPF2N60C.

Upverter

Technical Drawing1 page5 years ago

Farnell

IHS

onsemi

Newark

Inventory History

3 month trend:

+0.00%

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Alternate Parts

This Part

Alternate Parts

onsemiFQPF2N60C

onsemiFQPF2N60

Price @ 1000

$ 0.697

$ 0.483

Stock

237,911

145,915

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220

TO-220-3

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

2 A

1.6 A

Threshold Voltage

4 V

Rds On Max

4.7 Ω

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

23 W

28 W

Input Capacitance

235 pF

350 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-10-02

Lifecycle StatusEOL (Last Updated: 2 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi FQPF2N60C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 600 V, 2 A, 4.7 Ω, TO-220F

onsemi

N-Channel 600 V 4.7 Ohm Flange Mount Mosfet - TO-220F

Future Electronics

600V 2A 4.7´Î@10V1A 23W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:23W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:23W; Power Dissipation Pd:23W; Pulse Current Idm:8A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor