onsemi FQPF3N80C

Name: onsemi FQPF3N80C
Brand: onsemi
SKU: FQPF3N80C

Power Mosfet, N-channel, Qfet®, 800 V, 3.0 A, 4.8 Ω, TO-220F

$ 0.861

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Verical	8	FQPF3N80C	3,000	8			0.963	0.918	0.787	0.787
Arrow Electronics		FQPF3N80C	3,004	1		1.267	0.956	0.910	0.781	0.781
Rochester Electronics	2	FQPF3N80C	191,597					1.040	0.863	0.770	6h
DigiKey		FQPF3N80C-ND	85	1	Tube	2.630	2.630	1.162	0.861	0.764
Newark		FQPF3N80C	0	250					1.340	1.120

Inventory History

3 month trend: +1.47%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQPF3N80C.

Upverter

Technical Drawing1 page5 years ago

IHS

Fairchild Semiconductor

onsemi

Farnell

Inventory History

3 month trend:

+1.47%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQPF3N80C

onsemiFQPF3N80CYDTU

Price @ 1000

$ 0.861

$ 0.777

Stock

783,572

36,810

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

800 V

Continuous Drain Current (ID)

3 A

Threshold Voltage

5 V

Rds On Max

4.8 Ω

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

39 W

Input Capacitance

705 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-05-21

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQPF3N80C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F

onsemi

In a Pack of 5, N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F ON Semiconductor FQPF3N80C

Fly-Wing Technology

800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor