STMicroelectronics STF13N80K5
$ 1.72
Production
Inventory History
3 month trend: -12.20%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descriptions
Descriptions of STMicroelectronics STF13N80K5 provided by its distributors.
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220FP package
STF13N80K5 N-channel MOSFET Transistor, 12 A, 800 V, 3-Pin TO-220FP
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 12A TO-220FP
35W(Tc) 30V 5V@ 100¦ÌA 29nC@ 10 V 1N 800V 450m¦¸@ 6A,10V 12A 870pF@100V TO-220FP 20mm
Power Field-Effect Transistor, 12A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 800V, 12A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STF13N80K5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -12.20%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance870 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation35 W
Manufacturer Package IdentifierTO-220FP-7012510
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation35 W
Rds On Max450 mΩ
Rise Time16 ns
Schedule B8541290080
Turn-Off Delay Time42 ns
Turn-On Delay Time16 ns
Dimensions
Height20 mm
Length10.6 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant