STMicroelectronics STP11NM60FDFP
$ 2.286
Production
Inventory History
3 month trend: -0.58%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP11NM60FDFP.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 2 years ago)
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Descriptions
Descriptions of STMicroelectronics STP11NM60FDFP provided by its distributors.
N-Channel 600V - 0.4Ohm - 11A FDmesh(TM) POWER MOSFET (with FAST DIODE)
N-Channel 600 V 0.45 Ohm MDmesh Power MosFet - TO-220FP
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
Mosfet Transistor, N Channel, 11 A, 600 V, 450 Mohm, 10 V, 4 V |Stmicroelectronics STP11NM60FDFP
35W(Tc) 30V 5V@ 250¦ÌA 40nC@ 10 V 1N 600V 450m¦¸@ 5.5A,10V 11A 900pF@25V TO-220FP
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.58%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance900 pF
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage600 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation35 W
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-On Delay Time20 ns
Voltage Rating (DC)600 V
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP11NM60FDFP.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant