STMicroelectronics STF12N65M2
$ 0.867
Production
Inventory History
3 month trend: -11.84%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-03-11
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STF12N65M2 provided by its distributors.
N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package
N-Channel 650 V 500 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
STF12N65M2 N-CHANNEL MOSFET TRANSISTOR, 8 A, 650 V, 3-PIN TO-220FP
Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 8A I(D), 650V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 650V, 8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -11.84%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8 A
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance535 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max500 mΩ
Schedule B8541290080
Turn-Off Delay Time34 ns
Turn-On Delay Time9 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm