STMicroelectronics STF11N65M5
N-channel 650 V, 0.43 Ohm typ., 9 A MDmesh M5 Power MOSFET in TO-220FP package
$ 1.019
Production
Inventory History
3 month trend: +16.85%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF11N65M5.
CAD Models
Download STMicroelectronics STF11N65M5 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-24
Lifecycle StatusProduction (Last Updated: 5 days ago)
Related Parts
STMicroelectronicsSTF13N65M2
N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTF15N65M5
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220FP package
STMicroelectronicsSTF13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
InfineonIPA60R400CEXKSA1
Single N-Channel 600 V 400 mOhm 32 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
InfineonIPA60R460CEXKSA1
MOSFET N-CH 600V 9.1A TO220-FP N-Channel 600 V 9.1A (Tc) 30W (Tc) Through Hole PG-TO220-FP
onsemiFCPF380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, TO-220F
Descriptions
Descriptions of STMicroelectronics STF11N65M5 provided by its distributors.
N-channel 650 V, 0.43 Ohm typ., 9 A MDmesh M5 Power MOSFET in TO-220FP package
STF11N65M5 N-channel MOSFET Transistor, 9 A, 710 V, 3-Pin TO-220FP
Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
25W(Tc) 25V 5V@ 250µA 17nC@ 10 V 1individualNChannel 650V 480mΩ@ 4.5A,10V 9A 644pF@100V TO-220FP Through hole mounting 16.4mm(height)
MOSFET, N-CH, 650V, 9A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.43ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +16.85%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance644 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation85 W
Rds On Max480 mΩ
Turn-Off Delay Time23 ns
Turn-On Delay Time23 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF11N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant