STMicroelectronics STB45N65M5
$ 3.794
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Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB45N65M5.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STB45N65M5 provided by its distributors.
N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in D2PAK package
STB45N65M5 N-CHANNEL MOSFET TRANSISTOR, 35 A, 710 V, 3-PIN D2PAK
TEXAS INSTRUMENTS - TPS2031DR - IC, HIGH SIDE MOSFET PWR SW, 5.5V 8-SOIC, FULL REEL
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh M5series, Vds=710 V, 35 A, D2PAK (TO-263)encapsulation, surface mount, 3Pin
Mosfet, N-Ch, 650V, 35A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STB45N65M5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.375 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation210 W
Manufacturer Package IdentifierD2Pak
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation210 W
Rds On Max78 mΩ
Resistance78 mΩ
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time79.5 ns
Turn-On Delay Time11 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB45N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant