STMicroelectronics STB57N65M5
$ 5.232
Production
Inventory History
3 month trend: +85.33%
CAD Models
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Alternate Parts
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CAD Models
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Descriptions
Descriptions of STMicroelectronics STB57N65M5 provided by its distributors.
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in D2PAK package
STB57N65M5 N-CHANNEL MOSFET TRANSISTOR, 42 A, 710 V, 3-PIN D2PAK
N-Channel 650 V 42 A 250 W 63 mOhm Surface Mount Mosfet - TO-263 (D2PAK)
Trans MOSFET N-CH 650V 42A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 42A I(D), 650V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh M5series, Vds=710 V, 42 A, D2PAK (TO-263)encapsulation, surface mount, 3Pin
MOSFET, N-CH, 650V, 42A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh V Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +85.33%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance63 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Manufacturer Package IdentifierD2PAK-0079457
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation250 W
Rds On Max63 mΩ
Resistance63 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time12 ns
Turn-On Delay Time73 ns
Dimensions
Height4.83 mm
Length10.4 mm
Width9.35 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant