STMicroelectronics STB35N65M5
$ 3.645
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STB35N65M5 | 0 | 1K | Tape & Reel | ||||||||
| Avnet | STB35N65M5 | 0 | 1K | 4d | ||||||||
| Arrow Electronics | STB35N65M5 | 0 | 1K | |||||||||
| Farnell | STB35N65M5 | 0 | 1 | 6h | ||||||||
| Win Source | WS-STB35N65M5 | 4,000 | 9 | 12h |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB35N65M5.
CAD Models
Download STMicroelectronics STB35N65M5 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 SnapEDA | Footprint | 3D | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Related Parts
STMicroelectronicsSTB42N65M5
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB45N65M5
N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB38N65M5
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in D2PAK package
VishaySIHB24N65E-GE3
E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK
VishaySIHB24N65E-E3
MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
Descriptions
Descriptions of STMicroelectronics STB35N65M5 provided by its distributors.
N-channel 650 V, 0.085 Ohm, 27 A MDmesh M5 Power MOSFET in D2PAK package
N-Channel 650 V 27 A 98 mOhm 160 W Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET N-CH Si 650V 27A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 27A I(D), 650V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 650V, 27A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance98 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.75 nF
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation160 W
Rds On Max98 mΩ
Resistance98 Ω
Rise Time12 ns
Threshold Voltage4 V
Turn-Off Delay Time60 ns
Turn-On Delay Time60 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB35N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant