onsemi FCB20N60TM

Name: onsemi FCB20N60TM
Brand: onsemi
SKU: FCB20N60TM

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK

$ 2.61

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
DigiKey	2	FCB20N60TMCT-ND	782	1	Cut Tape	7.090	4.775	3.463	3.463	3.463
Flip Electronics		FCB20N60TM	7,200								5d
Newark	2	FCB20N60TM	0	1	Tape & Reel	4.140	4.140	4.140	4.140	4.140
Onlinecomponents.com		FCB20N60TM	0	10	Bulk		4.940	3.410	2.610	2.590
Avnet		FCB20N60TM	0	800					2.605	2.531	4d

Inventory History

3 month trend: -18.03%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCB20N60TM.

Farnell

Datasheet9 pages4 years ago

Datasheet0 pages0 years ago

IHS

Upverter

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

-18.03%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFCB20N60TM

onsemiFCB20N60FTM

Price @ 1000

$ 2.61

$ 2.625

Stock

279,459

260,874

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

20 A

Threshold Voltage

5 V

Rds On Max

190 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

208 W

Input Capacitance

3.08 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-02-04

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FCB20N60TM provided by its distributors.

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK

onsemi

MOSFET N-CH 600V 20A D2PAK / Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R

Win Source

Power MOSFET, N Channel, 600 V, 20 A, 0.15 ohm, TO-263 (D2PAK), Surface Mount

Avnet

FCB20N60 Series 600 V 20 A 190 mOhm N-Channel SuperFET® MOSFET - D2PAK-3

Future Electronics

Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

Semicontronic

Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:208W; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi FCB20N60TM.

Newark

MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:60A

Farnell

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor