STMicroelectronics SCTW90N65G2V

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
$ 19.229
EOL

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Datasheets & Documents

Download datasheets and manufacturer documentation for STMicroelectronics SCTW90N65G2V.

TME

Datasheet12 pages6 years ago

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-06-26
Lifecycle StatusEOL (Last Updated: 4 months ago)

Descriptions

Descriptions of STMicroelectronics SCTW90N65G2V provided by its distributors.

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Ciiva
HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Silicon Carbide MOSFET, Single, N Channel, 119 A, 650 V, 0.018 ohm, TO-247
SIC MOSFET, N-CH, 650V, 119A, TO-247-3; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:119A; Drain Source Voltage Vds:650V; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Power Dissipation:565W RoHS Compliant: Yes

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics