STARPOWER GD600HFY120P1S

Insulated Gate Bipolar Transistor, 951A I(C), 1200V V(BR)CES, N-Channel
$ 327.96
Manufacturer PageDatasheet

Price and Stock

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DistributorSKUMinPkg
NewarkGD600HFY120P1S01
FarnellGD600HFY120P1S01
16h
element14 APACGD600HFY120P1S01
5h

Datasheets & Documents

Download datasheets and manufacturer documentation for STARPOWER GD600HFY120P1S.

IHS

Datasheet10 pages9 years ago

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Export Control Classification Number (ECCN) CodeEAR99

Descriptions

Descriptions of STARPOWER GD600HFY120P1S provided by its distributors.

Insulated Gate Bipolar Transistor, 951A I(C), 1200V V(BR)CES, N-Channel
IHS
Starpower GD600HFY120P1S IGBTモジュール
RS APAC
TRANSISTOR, IGBT MODULE, 1.2KV, 951A;
Farnell
IGBT, HALF BRIDGE, 1.2KV, 951A, MODULE; Continuous Collector Current:951A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:3.1kW; Operating Temperature Max:150°C; IGBT Termination:Stud; Transistor Mounting:Panel RoHS Compliant: Yes
Newark

Manufacturer Aliases

STARPOWER has several brands around the world that distributors may use as alternate names. STARPOWER may also be known as the following names:

  • STARPOWER SEMICONDUCTOR LTD
  • STARPOWER SEMICONDUCTOR
  • StarPower Europe AG