STARPOWER GD30PJX65L2S
$ 32.79
Inventory History
3 month trend: -14.29%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STARPOWER GD30PJX65L2S.
Descriptions
Descriptions of STARPOWER GD30PJX65L2S provided by its distributors.
Insulated Gate Bipolar Transistor, 55A I(C), 650V V(BR)CES, N-Channel
Starpower GD30PJX65L2S IGBTモジュール
晶体管, IGBT 模块, 650V, 55A, 163W;
IGBT, PIM, 650V, 55A, MODULE; Continuous Collector Current:55A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:163W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:650V RoHS Compliant: Yes
Manufacturer Aliases
STARPOWER has several brands around the world that distributors may use as alternate names. STARPOWER may also be known as the following names:
- STARPOWER SEMICONDUCTOR LTD
- STARPOWER SEMICONDUCTOR
- StarPower Europe AG
Inventory History
3 month trend: -14.29%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals23
Technical
Collector Emitter Saturation Voltage1.9 V
Collector Emitter Voltage (VCEO)650 V
Max Collector Current55 A
Max Operating Temperature150 °C
Max Power Dissipation163 W
Min Operating Temperature-40 °C
Number of Elements7
Datasheets & Documents
Download datasheets and manufacturer documentation for STARPOWER GD30PJX65L2S.