STARPOWER GD300HFY120C2S

Insulated Gate Bipolar Transistor, 444A I(C), 1200V V(BR)CES, N-Channel
$ 106.32

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for STARPOWER GD300HFY120C2S.

IHS

Datasheet9 pages3 years ago

Inventory History

3 month trend:
-40.00%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Descriptions

Descriptions of STARPOWER GD300HFY120C2S provided by its distributors.

Insulated Gate Bipolar Transistor, 444A I(C), 1200V V(BR)CES, N-Channel
晶体管, IGBT 模块, 1.2KV, 600A, 150度 C, 2.941KW;
Starpower GD300HFY120C2S IGBTモジュール
IGBT MOD, 1.2KV, 600A, 150DEG C, 2.941KW; Transistor Polarity: Dual N Channel; DC Collector Current: 600A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 2.941kW; Collector Emitter Voltage V(br)ceo: 1
Igbt Mod, 1.2Kv, 600A, 150Deg C, 2.941Kw; Continuous Collector Current:600A; Collector Emitter Saturation Voltage:2V; Power Dissipation:2.941Kw; Operating Temperature Max:150°C; Igbt Termination:Stud; Transistor Mounting:Panel Rohs Compliant: Yes |Starpower GD300HFY120C2S

Manufacturer Aliases

STARPOWER has several brands around the world that distributors may use as alternate names. STARPOWER may also be known as the following names:

  • STARPOWER SEMICONDUCTOR LTD
  • STARPOWER SEMICONDUCTOR
  • StarPower Europe AG