STARPOWER GD200HFY120C2S

Name: STARPOWER GD200HFY120C2S
Brand: STARPOWER
SKU: GD200HFY120C2S

Insulated Gate Bipolar Transistor, 309A I(C), 1200V V(BR)CES, N-Channel

$ 97.55

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Distributor	SKU		Min
Newark	GD200HFY120C2S	3	1	108.65	104.23	101.99	97.550	97.550
Farnell	GD200HFY120C2S	0	1	97.963*	85.669*	84.317*	84.317*	84.317*	22h
element14 APAC	GD200HFY120C2S	0	1	109.08*	92.658*	88.265*	88.265*	88.265*	11h
IC Components Ltd.	GD200HFY120C2S	28,400		56.510	56.510	56.510	56.510	56.510	22h
YIC International	GD200HFY120C2S	28,300		56.280	56.280	56.280	56.280	56.280	3h

Inventory History

3 month trend: -32.14%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet9 pages9 years ago

Inventory History

3 month trend:

-32.14%

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Export Control Classification Number (ECCN) CodeEAR99

Descriptions

Descriptions of STARPOWER GD200HFY120C2S provided by its distributors.

Insulated Gate Bipolar Transistor, 309A I(C), 1200V V(BR)CES, N-Channel

IHS

Starpower GD200HFY120C2S IGBTモジュール

RS APAC

IGBT MOD, 1.2KV, 309A, 150DEG C, 1.006KW; Transistor Polarity: Dual N Channel; DC Collector Current: 309A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 1.006kW; Collector Emitter Voltage V(br)ceo: 1

Farnell

Igbt Mod, 1.2Kv, 309A, 150Deg C, 1.006Kw; Continuous Collector Current:309A; Collector Emitter Saturation Voltage:2V; Power Dissipation:1.006Kw; Operating Temperature Max:150°C; Igbt Termination:Stud; Transistor Mounting:Panel Rohs Compliant: Yes |Starpower GD200HFY120C2S

Newark