Semikron SKM50GB123D

Trans IGBT Module N-CH 1.2KV 50A 7-Pin Case D-61

IGBT MODULE, DUAL; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.8V; Power Dissipation Pd:400W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:SE

IGBT MODULE, DUAL; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:50A; Voltage, Vce Sat Max:2.8V; Power Dissipation:310W; Case Style:SEMITRANS 2; Termination Type:Screw; ;RoHS Compliant: Yes

not recommended for new design Features: MOS input (voltage controlled) Low inductance case Low tail current with low temperature dependence High short circuit capability, self limiting to 6xI CNOM Fast and soft CAL diodes Isolated copper base plate using DCB (Direct Copper Bonding Technology) Typical Applications: AC inverter drives Power supplies

IGBT MODULE, DUAL; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:50A; Voltage, Vce Sat Max:2.8V; Power Dissipation:310W; Case Style:SEMITRANS 2; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic Continuous b Max:40A; Current Ic av:50A; Current, Icm Pulsed:100A; External Depth:34mm; External Length / Height:29.5mm; Fixing Centres:80mm; Fixing Hole Diameter:6.4mm; Power, Pd:400W; Power, Ptot:400W; Temperature, Current:25°C; Time, Rise:60ns; Transistors, No. of:2; Width, External:94mm