Semikron SKM40GD123D

Igbt Array & Module Transistor, N Channel, 40 A, 3.3 V, 200 W, 1.2 Kv, Semitrans 6 |Semikron SKM 40 GD 123 D

IGBT MODULE, 6 PACK; Transistor Polarity:N Channel; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):3.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:

IGBT MODULE, 6 PACK; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:40A; Voltage, Vce Sat Max:3.3V; Case Style:SEMITRANS 6; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic Continuous b Max:25A; Current Ic av:40A; Current, Icm Pulsed:70A; External Depth:45mm; External Length / Height:24mm; Fixing Centres:93mm; Fixing Hole Diameter:5.5mm; Power, Pd:200W; Power, Ptot:200W; Temperature, Current:25°C; Time, Rise:55ns; Transistors, No. of:6; Width, External:105mm

not recommended for new design Features: MOS input (voltage controlled) N channel, homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (9 mm) and creepage distances (13 mm) Typical Applications: Switched mode power supplies Three phase inverters for AC motor speed control Pulse frequencies also above 15 kHz