Samsung SSP4N80

Name: Samsung SSP4N80
Brand: Samsung
SKU: SSP4N80

Power Field-Effect Transistor, 4A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

Obsolete

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

Distributor	SKU		Min
Win Source	WS-SSP4N80	20	7		7.571	5.047	5.047	5.047	9h
Elcom Components	SSP4N80	70		4.200	4.200	4.200	4.200	4.200	20h
Quest	SSP4N80	56		8.820	4.410	4.116	4.116	4.116	7h
C Plus Electronics	SSP4N80	Contact							>1wk
North Star Micro	NS-SSP4N80	Contact							>1wk

Download datasheets and manufacturer documentation for Samsung SSP4N80.

Datasheet1 page0 years ago

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-04-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Descriptions of Samsung SSP4N80 provided by its distributors.

Power Field-Effect Transistor, 4A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Samsung has several brands around the world that distributors may use as alternate names. Samsung may also be known as the following names:

Physical

Number of Terminals3

Technical

Continuous Drain Current (ID)4 A

Drain to Source Resistance3.5 Ω

Max Operating Temperature150 °C

Max Power Dissipation125 W

Min Breakdown Voltage800 V

Number of Elements1

Download datasheets and manufacturer documentation for Samsung SSP4N80.

Datasheet1 page0 years ago