ROHM SCT2280KEGC11

Name: ROHM SCT2280KEGC11
Brand: ROHM
SKU: SCT2280KEGC11

Transistor MOSFET N-Channel 1200V 14A 3-Pin TO-247N Tube

$ 7.4

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Distributor		SKU		Min	Pkg
CoreStaff		ST74739209	900	1		8.972	6.121	5.561	5.530	5.530	19h
Verical		SCT2280KEGC11	900	9			7.742	7.458	7.252	7.252
Newark		SCT2280KEGC11	112	1		10.990	7.900	7.610	7.610	7.610
TME	2	SCT2280KEGC11	0	1		10.160	8.830	8.420	8.420	8.420	1d
TTI		SCT2280KEGC11	0	450	Tube				7.400	7.400	3d

Inventory History

3 month trend: +0.00%

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Datasheets & Documents

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IHS

Datasheet14 pages7 years ago

Inventory History

3 month trend:

+0.00%

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Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-03-24

Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of ROHM SCT2280KEGC11 provided by its distributors.

Transistor MOSFET N-Channel 1200V 14A 3-Pin TO-247N Tube

Avnet Silica

1200 V 14A 108W Through Hole N-Channel SiC Power MOSFET - TO-247N

Future Electronics

Trans MOSFET N-CH SiC 1.2KV 14A 3-Pin(3+Tab) TO-247N Tube

Verical

Power Field-Effect Transistor, 14A I(D), 1200V, 0.364ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

IHS

ROHM NMOS, Vds=1200 V, 14 A, TO-247N, , 3

UnikeyIC

1200V, 14A, THD, SILICON-CARBIDE

DigiKey

SIC MOSFET, N-CH, 1.2KV, 14A, TO-247N-3; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Power Dissipation:108WRoHS Compliant: Yes

Newark