ROHM RGT30NS65DGC9

Name: ROHM RGT30NS65DGC9
Brand: ROHM
SKU: RGT30NS65DGC9

Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-262AA

$ 1.031

NRND

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
CoreStaff		ST37829945	47	1		0.505	0.492	0.473	0.470	0.469	18h
Verical	3	RGT30NS65DG-C9	50	2			1.031	1.031	1.031	1.031
Arrow Electronics		RGT30NS65DGC9	50	1		0.743	0.743	0.743	0.743	0.743
DigiKey		RGT30NS65DGC9-ND	2,894	1	Tube	3.860	3.860	1.773	1.347	1.289
Farnell		RGT30NS65DGC9	0	1		3.569*	2.601*	1.689*	1.430*	1.430*	1d

Inventory History

3 month trend: -19.20%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for ROHM RGT30NS65DGC9.

IHS

Datasheet13 pages10 years ago

Rohm SCT

Inventory History

3 month trend:

-19.20%

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Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2017-12-20

Lifecycle StatusNRND (Last Updated: 1 week ago)

Descriptions

Descriptions of ROHM RGT30NS65DGC9 provided by its distributors.

Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-262AA

IHS

Trans IGBT Chip N-CH 650V 30A 133mW 3-Pin(2+Tab) LPDS Tube

Verical

Field Stop Trench IGBT 650V 15A LPDS

RS APAC

IGBT TRENCH FIELD 650V 30A TO262

Easev

IGBT TRENCH FS 650V 30A TO-262

DigiKey

IGBT, 650V, 30A, 175DEG C, 133W; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 133W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-262; No. of Pins

Farnell

IGBT, SINGLE, 650V, 30A, TO-262; Continuous Collector Current:30A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:133W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Newark