ROHM BSM180D12P3C007

Name: ROHM BSM180D12P3C007
Brand: ROHM
SKU: BSM180D12P3C007

2N-Channel 1200 V 180 A 880 W Chassis Mount Mosfet Array - Module

$ 562.095

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Distributor		SKU		Min	Pkg
CoreStaff	2	ST74118566	12	1		405.47	399.86	399.46	399.46	399.46	12h
Verical	3	BSM180D12P3C007	24	1		544.03	544.03	544.03	544.03	544.03
Arrow Electronics		BSM180D12P3C007	24	1		544.03	544.03	544.03	544.03	544.03
DigiKey		BSM180D12P3C007-ND	5	1	Bulk	693.94	693.94	693.94	693.94	693.94
Newark		BSM180D12P3C007	0	1		580.16	580.16	580.16	580.16	580.16

Inventory History

3 month trend: +81.48%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for ROHM BSM180D12P3C007.

IHS

Datasheet12 pages6 years ago

Inventory History

3 month trend:

+81.48%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2015-07-15

Lifecycle StatusProduction (Last Updated: 5 months ago)

Descriptions

Descriptions of ROHM BSM180D12P3C007 provided by its distributors.

2N-Channel 1200 V 180 A 880 W Chassis Mount Mosfet Array - Module

Future Electronics

Trans MOSFET N-CH SiC 1.2KV 180A 10-Pin Tray

Verical

Power Field-Effect Transistor, 180A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

IHS

SiC-N-Ch-Half-Bridge+2xSBD 1200V 180A C-

Schukat

SIC MOSFET, DUAL N CHANNEL, 1.2KV, 180A;

Farnell

场效应管, SIC MOSFET, 双 N 沟道, 1.2KV, 180A;

element14 APAC

MOSFET 2N-CH 1200V 180A MODULE

DigiKey

ROHM NSiC BSM, Vds=1200 V, 180 A, C, , 4

UnikeyIC

SIC MOSFET, N-CH, 1.2KV, 180A, MODULE; MOSFET Module Configuration:Half Bridge; Channel Type:Dual N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:-; Product Range:- RoHS Compliant: Yes

Newark