onsemi RFD14N05LSM9A

Name: onsemi RFD14N05LSM9A
Brand: onsemi
SKU: RFD14N05LSM9A

Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 14A Tc 14mA 48W 16ns

$ 0.368

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Future Electronics	3	RFD14N05LSM9A	22,500	2500	Tape & Reel					0.465
Newark	2	RFD14N05LSM9A	10	1	Cut Tape	0.106	0.106	0.106	0.106	0.106
Verical		RFD14N05LSM9A	5,000	2500						0.290
Arrow Electronics	2	RFD14N05LSM9A	27	1		0.163	0.160	0.151	0.151	0.151
Master Electronics		RFD14N05LSM9A	1,800	100				0.528	0.368	0.278

Inventory History

3 month trend: +168%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi RFD14N05LSM9A.

Newark

Datasheet0 pages0 years ago

Upverter

IHS

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

+168%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiRFD14N05LSM9A

onsemiRFD14N05LSM

Price @ 1000

$ 0.368

$ 0.486

Stock

390,618

360,431

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

50 V

Continuous Drain Current (ID)

14 A

Threshold Voltage

2 V

Rds On Max

100 mΩ

Gate to Source Voltage (Vgs)

10 V

Power Dissipation

48 W

Input Capacitance

670 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-04-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi RFD14N05LSM9A provided by its distributors.

Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 14A Tc 14mA 48W 16ns

AAA CHIPS

N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ

onsemi

Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

N CHANNEL MOSFET, 50V, 14mA; Transistor; N CHANNEL MOSFET, 50V, 14mA; Transistor Polarity:N Channel; Continuous Drain Current Id:14mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V

element14 APAC

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.

Fairchild Semiconductor