onsemi NXH80T120L3Q0S3G

Name: onsemi NXH80T120L3Q0S3G
Brand: onsemi
SKU: NXH80T120L3Q0S3G

Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT Solder pins

$ 55.3

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Price and Stock

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Distributor		SKU		Min	Pkg
Future Electronics	2	NXH80T120L3Q0S3G	24	24	Tray			53.050	52.620	52.620
Newark		NXH80T120L3Q0S3G	1	1		55.300	55.300	55.300	55.300	55.300
Verical	2	NXH80T120L3Q0S3G	136	25				64.600	57.800	54.400
Arrow Electronics		NXH80T120L3Q0S3G	24	24				58.300	58.300	58.300
Rochester Electronics		NXH80T120L3Q0S3G	136					51.680	46.240	43.520	1d

Inventory History

3 month trend: -5.80%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NXH80T120L3Q0S3G.

IHS

Datasheet20 pages6 years ago

Master Electronics

Future Electronics

Inventory History

3 month trend:

-5.80%

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Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-09-28

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Descriptions

Descriptions of onsemi NXH80T120L3Q0S3G provided by its distributors.

Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT Solder pins

onsemi

Trans IGBT Module N-CH 1200V 75A/50A/50A/75A 188W 20-Pin Q0PACK Tray

Richardson RFPD

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel

IHS

IGBT Modules PIM gen3 1200V 80A

Future Electronics

IGBT MOD 1200V 75A 188W 20-PIM

DigiKey

PIM GENERATION3 Q0PACK 1200V, 80

Easev

IGBT MODULE, 1.2KV, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:188W; Operating Temperature Max:175°C; IGBT Termination:Solder Pin; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Newark