onsemi NXH100B120H3Q0SG

Name: onsemi NXH100B120H3Q0SG
Brand: onsemi
SKU: NXH100B120H3Q0SG

Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. Solder pins

$ 52

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Distributor	SKU		Min	Pkg
Newark	NXH100B120H3Q0SG	32	1		69.260	55.770	55.770	55.770	55.770
Verical	NXH100B120H3Q0SG	192	24				54.148	54.148	54.148
Rochester Electronics	NXH100B120H3Q0SG	550					47.370	42.380	39.890	6h
DigiKey	5556-NXH100B120H3Q0SG-ND	20	1	Tray	70.610	70.610	51.236	51.236	51.236
Flip Electronics	NXH100B120H3Q0SG	216								4d

Inventory History

3 month trend: +94.94%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NXH100B120H3Q0SG.

IHS

Datasheet16 pages3 years ago

Master Electronics

onsemi

Inventory History

3 month trend:

+94.94%

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Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Descriptions

Descriptions of onsemi NXH100B120H3Q0SG provided by its distributors.

Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. Solder pins

onsemi

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

IHS

Trans IGBT Module N-CH 1200V 50A 186000mW Tray

Verical

IGBT Modules PIM 60-80KW Q0BOOST

Future Electronics

IGBT MOD 1200V 61A 186W 22-PIM

DigiKey

IGBT MODULE, 1.2KV, 61A, 186W;

Farnell

IGBT MODULE, 1.2KV, 61A; Continuous Collector Current:61A; Collector Emitter Saturation Voltage:1.77V; Power Dissipation:186W; Operating Temperature Max:150°C; IGBT Termination:Solder; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Newark