onsemi NTD360N80S3Z
$ 1.65
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | NTD360N80S3Z | 2,270 | 2500 | 23h | ||||||||
| Newark | NTD360N80S3Z | 2,227 | 1 | Cut Tape | ||||||||
| Verical | NTD360N80S3Z | 2,500 | 2500 | |||||||||
| Arrow Electronics | NTD360N80S3Z | 2,500 | 2500 | |||||||||
| DigiKey | 488-NTD360N80S3ZCT-ND | 6,891 | 1 | Cut Tape |
Inventory History
3 month trend: -6.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi NTD360N80S3Z provided by its distributors.
MOSFET N-CH 800V 13A DPAK / N-Channel 800 V 13A (Tc) 96W (Tc) Surface Mount D-PAK (TO-252)
MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, DPAK
Transistor MOSFET N-Channel 800V 13A 3-Pin TO-252 T/R
Avnet Japan
Mosfet, N-Ch, 800V, 13A, To-252 Rohs Compliant: Yes |Onsemi NTD360N80S3Z
Power Field-Effect Transistor, 13A I(D), 800V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -6.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)800 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation96 W
Schedule B8541290080
Turn-Off Delay Time110 ns
Turn-On Delay Time21.2 ns
Dimensions
Height2.517 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Compliance Statements