onsemi NDS332P

Name: onsemi NDS332P
Brand: onsemi
SKU: NDS332P

Transistor MOSFET P Channel 20 Volt 1 Amp 3 Pin Supersot Tape and Reel

$ 0.143

Production

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Avnet		NDS332P	213,000	3K						0.084	5h
Newark	3	NDS332P	168	1	Cut Tape	0.752	0.462	0.303	0.205	0.205
Arrow Electronics	4	NDS332P	5,042	1		0.571	0.569	0.565	0.558	0.556
Verical	8	NDS332P	72,000	3K						0.076
Future Electronics	2	NDS332P	252,000	3K	Tape & Reel					0.111

Inventory History

3 month trend: +240%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NDS332P.

Farnell

Datasheet8 pages4 years ago

Datasheet0 pages0 years ago

Datasheet7 pages28 years ago

Datasheet0 pages0 years ago

Datasheet8 pages17 years ago

Datasheet0 pages0 years ago

Upverter

onsemi

Newark

element14 APAC

Inventory History

3 month trend:

+240%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1996-05-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi NDS332P provided by its distributors.

Transistor MOSFET P Channel 20 Volt 1 Amp 3 Pin Supersot Tape and Reel

Jameco

P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -1A, 0.41Ω

onsemi

Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

IHS

MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: -2.7V; Threshold Voltage Vgs: -600mV; Power Dissipati

Farnell

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 410 / Gate-Source Voltage V = 8 / Fall Time ns = 45 / Rise Time ns = 45 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

Distrelec

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Fairchild Semiconductor