onsemi MTB30P06VT4G

Name: onsemi MTB30P06VT4G
Brand: onsemi
SKU: MTB30P06VT4G

Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK

$ 1.245

Obsolete

Datasheet

Manufacturer Page

Price and Stock

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Distributor

SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

250

USD

1.245

1.110

RS (Formerly Allied Electronics)

MTB30P06VT4G

Bulk

USD

2.000

1.900

1.720

19h

Component Stockers USA

USD

>1wk

USD

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MTB30P06VT4G.

IHS

Datasheet9 pages14 years ago

Upverter

onsemi

Newark

DigiKey

Inventory History

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Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-06-01

Lifecycle StatusObsolete (Last Updated: 5 years ago)

LTB Date2015-10-17

LTD Date2016-04-17

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MTB30P06VT4G provided by its distributors.

Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK

onsemi

MTB30P06VT4G P-CHANNEL MOSFET TRANSISTOR, 30 A, 60 V, 3-PIN D2PAK

RS (Formerly Allied Electronics)

Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 30A Tc 30A 3W 52.4ns

Fly-Wing Technology

Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R

Verical

60 VOLTS, 30 AMPS, P-CHANNEL D2PAK POWER MOSFET Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

3W(Ta)，125W(Tc) 15V 4V@ 250µA 80nC@ 10 V 1individualPChannel 60V 80mΩ@ 15A,10V 30A 2.19nF@25V D2PAK SMD mount 10.29mm*9.65mm*4.83mm

UnikeyIC

P CHANNEL MOSFET, -60V, 30A, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V

element14 APAC

P Channel Mosfet, -60V, 30A, D2-Pak; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:-30A; Tensión Drenaje-Fuente Vds:-60V; Resistencia De Activación Rds(On):67Mohm; Tensión Vgs De Medición Rds(On):-10V |Onsemi MTB30P06VT4G

Newark

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage high speed switching applications in power supplies converters and power motor controls these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

North Star Micro