onsemi MMBTH10

Name: onsemi MMBTH10
Brand: onsemi
SKU: MMBTH10

MMBTH10 Series NPN 225 mW 25 V 50 mA SMT RF Transistor - SOT-23-3

$ 0.019

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Verical	2	MMBTH10	461,354	298					0.019	0.019
Arrow Electronics		MMBTH10	461,354	1		0.019	0.019	0.019	0.019	0.019
Rochester Electronics	2	MMBTH10	87,000					0.040	0.033	0.029	19h
Farnell	2	MMBTH10...	0	5	Cut Tape		0.200*	0.079*	0.038*	0.031*	14h
Component Stockers USA		MMBTH10	61,396			0.030	0.030	0.030	0.030	0.030	>1wk

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MMBTH10.

IHS

Datasheet6 pages0 years ago

Datasheet0 pages0 years ago

Datasheet1 page25 years ago

Upverter

Fairchild Semiconductor

onsemi

Farnell

Inventory History

3 month trend:

+0.00%

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Alternate Parts

This Part

Alternate Parts

onsemiMMBTH10

onsemiMMBTH10LT1G

Price @ 1000

$ 0.019

$ 0.041

Stock

6,244,858

13,933,203

Authorized Distributors

Collector Emitter Breakdown Voltage

25 V

Continuous Collector Current

50 mA

Collector Base Voltage (VCBO)

30 V

Frequency

650 MHz

Max Power Dissipation

225 mW

300 mW

Transition Frequency

650 MHz

Case/Package

SOT-23

SOT-23-3

Mount

Surface Mount

Polarity

NPN

Gain Bandwidth Product

650 MHz

Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1989-01-01

Lifecycle StatusObsolete (Last Updated: 2 days ago)

LTB Date2018-06-22

LTD Date2018-12-22

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi MMBTH10 provided by its distributors.

MMBTH10 Series NPN 225 mW 25 V 50 mA SMT RF Transistor - SOT-23-3

Future Electronics

TRANSISTOR, RF, NPN, 25V, 650MHZ, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 650MHz; Power Dissipation Pd: 225mW; DC Collector Current: 50mA; DC Current Gain hFE: 60hFE;

Farnell

Transistor; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.225W; DC Current Gain Min (hfe):60; Package/Case:SOT-323; C-E Breakdown Voltage:25V; DC Collector Current:0.05A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

Newark

NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

Fairchild Semiconductor