onsemi MMBTA64

Name: onsemi MMBTA64
Brand: onsemi
SKU: MMBTA64

PNP 350 mW 30 V 1.2 A Surface Mount Darlington Transistor - SOT-23-3

$ 0.014

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics		MMBTA64	3	1		0.014	0.014	0.014	0.014	0.014
Farnell	2	MMBTA64...	0	5	Cut Tape		0.193*	0.078*	0.038*	0.031*	8h
Win Source		WS-MMBTA64	7,520	3760						0.015	8h
Worldway Electronics		MMBTA64	28,232	7	Tape & Reel		0.004	0.004	0.004	0.004	7h
ZTZ Technology Limited		MMBTA64	120,427			0.032	0.029	0.027	0.022	0.022	4d

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MMBTA64.

Upverter

Technical Drawing1 page4 years ago

IHS

Fairchild Semiconductor

onsemi

Farnell

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMMBTA64

Diodes Inc.MMBTA64-7-F

Price @ 1000

$ 0.014

$ 0.05

Stock

260,085

726,657

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Polarity

PNP

Collector Emitter Breakdown Voltage

-30 V

30 V

Max Collector Current

300 mA

500 mA

Transition Frequency

125 MHz

Collector Emitter Saturation Voltage

-1.5 V

1.5 V

hFE Min

10000

20000

Power Dissipation

350 mW

Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-08-27

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2018-06-22

LTD Date2018-12-22

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi MMBTA64 provided by its distributors.

PNP 350 mW 30 V 1.2 A Surface Mount Darlington Transistor - SOT-23-3

Future Electronics

Small Signal Bipolar Transistor, 0.3A I(C), PNP

IHS

Trans Darlington PNP 30V 1.2A 3-Pin SOT-23 T/R

Avnet

PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.

Fairchild Semiconductor

TRANSISTOR, BIPOL, PNP, -30V, SOT-23-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 350mW; DC Collector Current: -1.2A; DC Current Gain hFE: 10000h

Farnell

Small Signal Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):20000; Package/Case:SOT-23; C-E Breakdown Voltage:30V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

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