onsemi BCV26

Name: onsemi BCV26
Brand: onsemi
SKU: BCV26

PNP 350 mW 30 V 1.2 A Surface Mount Darlington Transistor - SOT-23-3

$ 0.086

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	BCV26	6,150	25K							5d
Verical	3	BCV26	25,497	6913						0.048
Arrow Electronics		BCV26	355	1		0.240	0.146	0.090	0.090	0.090
Master Electronics		BCV26	693	3K						0.079
Onlinecomponents.com		BCV26	693	3K	Bulk					0.079

Inventory History

3 month trend: -62.71%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi BCV26.

JRH Electronics

Datasheet0 pages0 years ago

IHS

Upverter

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Inventory History

3 month trend:

-62.71%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiBCV26

NexperiaBCV26,215

Price @ 1000

$ 0.086

$ 0.127

Stock

778,071

4,325,960

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

TO-236-3

Polarity

PNP

Collector Emitter Breakdown Voltage

30 V

Max Collector Current

1.2 A

500 mA

Transition Frequency

220 MHz

Collector Emitter Saturation Voltage

1 V

hFE Min

20000

Power Dissipation

350 mW

250 mW

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1994-01-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi BCV26 provided by its distributors.

PNP 350 mW 30 V 1.2 A Surface Mount Darlington Transistor - SOT-23-3

Future Electronics

PNP DARLINGTON TRANSISTOR Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

ComSIT Distribution GmbH

30V 20000@5V,100mA PNP 1.2A 350mW SOT-23(TO-236) Darlington Transistors ROHS

Dasenic

This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.

North Star Micro

TRANS, DARL, 30V, 1.2A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:350mW; DC Collector Current:1.2A; DC Current Gain hFE:20000; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:1.2A; Current Ic Continuous a Max:1.2A; Current Ic hFE:100mA; Device Marking:BCV26; Gain Bandwidth ft Typ:220MHz; Hfe Min:20000; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:FD; Termination Type:SMD; Voltage Vcbo:40V

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