onsemi HUF75639S3ST

Name: onsemi HUF75639S3ST
Brand: onsemi
SKU: HUF75639S3ST

Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 56A D2PAK

$ 1.257

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark	2	HUF75639S3ST	796	1	Cut Tape	4.000	2.780	2.540	2.540	2.540
Verical	8	HUF75639S3ST	96,165	200					1.563	1.388
Arrow Electronics		HUF75639S3ST	292	1		1.124	1.108	1.108	1.108	1.108
Rochester Electronics	2	HUF75639S3ST	110,726					1.500	1.250	1.110	1d
Onlinecomponents.com		HUF75639S3ST	0	200	Bulk				1.210	1.210

Inventory History

3 month trend: -0.37%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HUF75639S3ST.

IHS

Datasheet15 pages3 years ago

Datasheet10 pages24 years ago

Datasheet15 pages3 years ago

Master Electronics

Upverter

Newark

onsemi

Inventory History

3 month trend:

-0.37%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiHUF75639S3ST

onsemiHUF75639S3S

Price @ 1000

$ 1.257

$ 1.294

Stock

454,070

184,643

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263-3

D2PAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

56 A

Threshold Voltage

Rds On Max

25 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

Input Capacitance

2 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi HUF75639S3ST provided by its distributors.

Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 56A D2PAK

Win Source

N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

onsemi

200W(Tc) 20V 4V@ 250¦ÌA 130nC@ 20 V 1N 100V 25m¦¸@ 56A,10V 56A 2nF@25V D2PAK,TO-263 5.08mm

UnikeyIC

Transistor, mosfet, n-Channel,100V V(Br)Dss,56A I(D),to-263Ab Rohs Compliant: Yes |Onsemi HUF75639S3ST

Newark

N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB

Future Electronics

Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Fairchild Semiconductor