onsemi FQU1N60CTU

Name: onsemi FQU1N60CTU
Brand: onsemi
SKU: FQU1N60CTU

Power Mosfet, N-channel, Qfet®, 600 V, 1 A, 11.5 Ω, Ipak

$ 0.237

Obsolete

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SKU

Min

Pkg

Bulk Pricing

Avnet

FQU1N60CTU

2,320

3847

USD

0.206

10h

Rochester Electronics

USD

1266

USD

Component Stockers USA

USD

3 month trend: +0.00%

CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQU1N60CTU.

Official Datasheet1 year ago

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-12-03

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Descriptions

Descriptions of onsemi FQU1N60CTU provided by its distributors.

Power MOSFET, N-Channel, QFET®, 600 V, 1 A, 11.5 Ω, IPAK

onsemi

N-Channel 600 V 11.5 Ohm Through Hole Mosfet -TO-251AA

Future Electronics

N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 1A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

ComSIT Distribution GmbH

2.5W(Ta)，28W(Tc) 30V 4V@ 250µA 6.2nC@ 10 V 1individualNChannel 600V 11.5Ω@ 500mA,10V 1A 170pF@25V TO-251 Through hole mounting 6.8mm*2.5mm*6.3mm

UnikeyIC

MOSFET, N-CH, 600V, 1A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe

Farnell

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.