onsemi FQPF8N80C

Name: onsemi FQPF8N80C
Brand: onsemi
SKU: FQPF8N80C

Power Mosfet, N-channel, Qfet®, 800 V, 8 A, 1.55 Ω, TO-220F

$ 3.264

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min
Avnet	2	FQPF8N80C	700	198				3.264	3.163	5d
Flip Electronics		FQPF8N80C	700							7d
Newark		FQPF8N80C	0	1K
element14 APAC		FQPF8N80C	0	1	3.251*	2.274*	1.852*	1.594*	1.594*	1d
Farnell		FQPF8N80C	0	1	3.195*	3.088*	2.497*	1.933*	1.933*	18h

Inventory History

3 month trend: -1.41%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQPF8N80C.

IHS

Datasheet11 pages12 years ago

Datasheet0 pages0 years ago

onsemi

Factory Futures

Farnell

Fairchild Semiconductor

Inventory History

3 month trend:

-1.41%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQPF8N80C

onsemiFQPF8N80CYDTU

Price @ 1000

$ 3.264

$ 1.404

Stock

280,152

291,866

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

800 V

Continuous Drain Current (ID)

8 A

Threshold Voltage

5 V

Rds On Max

1.55 Ω

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

59 W

Input Capacitance

2.05 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-04-03

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusLIFETIME (Last Updated: 3 years ago)

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Descriptions

Descriptions of onsemi FQPF8N80C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F

onsemi

Power MOSFET, N Channel, 800 V, 8 A, 1.29 ohm, TO-220F, Through Hole

Avnet

Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:59W; Power Dissipation Pd:59W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor