STMicroelectronics STP8NK80ZFP
$ 1.6
Production
Inventory History
3 month trend: +3.74%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STP8NK80ZFP provided by its distributors.
N-channel 800 V, 1.3 Ohm, 6.2 A, TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
STP8NK80ZFP N-CHANNEL MOSFET TRANSISTOR, 6.2 A, 800 V, 3-PIN TO-220FP
Trans MOSFET N-CH 800V 6.2A 3-Pin(3+Tab) TO-220FP Tube
STMicroelectronics NMOS MDmesh, SuperMESH, Vds=800 V, 6.2 A, TO-220FP, , 3
6.2 A 800 V 1.5 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:30W; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics STP8NK80ZFP.
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +3.74%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.2 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.32 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max1.5 Ω
Resistance1.5 Ω
Rise Time30 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time48 ns
Turn-On Delay Time17 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant