STMicroelectronics STP10NK80ZFP
$ 2.118
Production
Inventory History
3 month trend: -3.40%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STP10NK80ZFP provided by its distributors.
N-Channel 800V - 0.8 Ohm - 9A - TO-220FP Zener-Protected SuperMESH(TM) POWER MOSFET
Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 9A TO-220FP
STP10NK80ZFP N-CHANNEL MOSFET TRANSISTOR, 9 A, 800 V, 3-PIN TO-220FP
MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:6A; Current Id Max:9A; On State resistance @ Vgs = 10V:900mohm; Package / Case:TO-220FP; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:36A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -3.40%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.18 nF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation40 W
Rds On Max900 mΩ
Resistance900 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time65 ns
Turn-On Delay Time30 ns
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant