onsemi FQP2N90

Name: onsemi FQP2N90
Brand: onsemi
SKU: FQP2N90

Power Mosfet, N-channel, Qfet®, 900 V, 2.2 A, 7.2 Ω, TO-220

$ 0.84

EOL

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Distributor		SKU		Min	Pkg
Future Electronics		FQP2N90	36	25	Tube			0.880	0.840	0.800
Verical		FQP2N90	1,358	335					0.930	0.829
Rochester Electronics		FQP2N90	1,478					0.896	0.744	0.663	14h
Flip Electronics		FQP2N90	95,000								5d
Farnell	2	FQP2N90	182	1		1.997*	1.407*	1.126*	1.126*	1.126*	9h

Inventory History

3 month trend: -0.02%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP2N90.

IHS

Datasheet8 pages12 years ago

Newark

Fairchild Semiconductor

onsemi

element14 APAC

Inventory History

3 month trend:

-0.02%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-07-13

Lifecycle StatusEOL (Last Updated: 1 day ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)

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Descriptions

Descriptions of onsemi FQP2N90 provided by its distributors.

Power MOSFET, N-Channel, QFET®, 900 V, 2.2 A, 7.2 Ω, TO-220

onsemi

85W(Tc) 30V 5V@ 250¦ÌA 15nC@ 10 V 1N 900V 7.2¦¸@ 1.1A,10V 2.2A 500pF@25V TO-220-3 9.4mm

UnikeyIC

Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) TO-220AB Rail

Avnet Japan

Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:900V; On Resistance Rds(on):7.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:SOT-78B; Current Id Max:2.2A; On State Resistance Max:7.2ohm; Package / Case:TO-220; Power Dissipation Pd:85W; Power Dissipation Pd:85W; Pulse Current Idm:8.8A; Termination Type:Through Hole; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor