Vishay IRFBG20PBF

Name: Vishay IRFBG20PBF
Brand: Vishay
SKU: IRFBG20PBF

Single N-Channel 1000 V 11 Ohms Flange Mount Power Mosfet - TO-220AB

$ 0.831

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Distributor		SKU		Min	Pkg
Avnet	2	63J6701	1,000	1K					1.690	1.690	1d
Newark		IRFBG20PBF	1,000	1		2.150	2.000	1.760	1.640	1.640
Verical	3	IRFBG20PBF	2,000	9			1.536	1.072	0.761	0.724
Arrow Electronics	2	IRFBG20PBF	2,000	1		2.358	1.536	1.072	0.761	0.735
Future Electronics		IRFBG20PBF	2,140	30	Tube			0.720	0.685	0.640

Inventory History

3 month trend: +12.15%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRFBG20PBF.

IHS

Datasheet8 pages2 years ago

Datasheet9 pages14 years ago

Newark

element14 APAC

element14

Future Electronics

Inventory History

3 month trend:

+12.15%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-07-11

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay IRFBG20PBF provided by its distributors.

Single N-Channel 1000 V 11 Ohms Flange Mount Power Mosfet - TO-220AB

Future Electronics

MOSFET N-CH 1000V 1.4A TO-220AB / Trans MOSFET N-CH 1KV 1.4A 3-Pin(3+Tab) TO-220AB

Win Source

Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

N Channel Mosfet, 1Kv, 1.4A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:1.4A; On Resistance Rds(On):11Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No

Newark

MOSFET, N, 1000V, 1.4A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):11.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:1.4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:5.2A; Termination Type:Through Hole; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

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