onsemi FQP6N80C

Name: onsemi FQP6N80C
Brand: onsemi
SKU: FQP6N80C

Power Mosfet, N-channel, Qfet®, 800 V, 5.5 A, 2.5 Ω, TO-220

$ 1.093

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	FQP6N80C	26	1		1.441	1.441	1.441	1.441	1.441
Verical	2	FQP6N80C	26	2			1.441	1.351	1.026	0.986
DigiKey		FQP6N80C-ND	49	1	Tube	3.140	3.140	1.416	1.061	0.977
Newark		FQP6N80C	0	200					1.710	1.430
Onlinecomponents.com		FQP6N80C	0	50	Bulk			1.990	1.150	1.110

Inventory History

3 month trend: -24.59%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP6N80C.

Upverter

Technical Drawing1 page6 years ago

Farnell

IHS

Fairchild Semiconductor

Future Electronics

Inventory History

3 month trend:

-24.59%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-06-18

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQP6N80C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220

onsemi

Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 800V 5.5A TO-220

Win Source

N-Channel 800 V 2.5 Ohm Through Hole Mosfet - TO-220

Future Electronics

Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.5A; Resistance, Rds On:2.1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:22A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:158W; Power, Pd:158W; Resistance, Rds on Max:2.5ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V; Width, External:10.67mm

Farnell