onsemi FQD9N25TM-F080
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FQD9N25TM-F080 | 0 | 2500 | Tape & Reel | 7h | |||||||
| Worldway Electronics | FQD9N25TM-F080 | 25,705 | 7 | Tape & Reel | 1d | |||||||
| Esaler Electronic | FQD9N25TM-F080 | 2,500 | 2d | |||||||||
| Aztech | FQD9N25TM_F080 | 18,277 | 1d | |||||||||
| Vigor Components | FQD9N25TM-F080 | 10 | 4d |
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-14
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Related Parts
Descriptions
Descriptions of onsemi FQD9N25TM-F080 provided by its distributors.
N-Channel Power MOSFET, QFET®, 250 V, 7.4 A, 420 mΩ, DPAK
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB
Mosfet, N-Ch, 250V, 7.4A, To-252; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:7.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQD9N25TM-F080
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)7.4 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance420 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance700 pF
Max Operating Temperature150 °C
Max Power Dissipation55 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max420 mΩ
Rise Time105 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time13 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements