Infineon IRFR9N20DPBF

Name: Infineon IRFR9N20DPBF
Brand: Infineon
SKU: IRFR9N20DPBF

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

$ 1.52

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR9N20DPBF	0	1	Bulk	1.690	1.520	1.520	1.520	1.520	20h
Farnell	IRFR9N20DPBF	0	1		0.993*	0.993*	0.624*	0.488*	0.488*	7h
Win Source	WS-IRFR9N20DPBF	5,550	10			6.256	4.171	4.171	4.171	8h
Worldway Electronics	IRFR9N20DPBF	15,266	7	Tube		0.483	0.474	0.456	0.447	1d
Fly-Wing Technology	IRFR9N20DPBF	35,841			4.028	3.305	3.202	2.995	2.995	2d

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR9N20DPBF.

IHS

Datasheet12 pages21 years ago

Datasheet11 pages21 years ago

element14 APAC

iiiC

DigiKey

Newark

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-07

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFR9N20DPBF provided by its distributors.

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

SMPS MOSFET Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

N CHANNEL MOSFET, 200V, 9.4A, D-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:86W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:9.4A; Junction to Case Thermal Resistance A:1.75°C/W; Package / Case:DPAK; Power Dissipation Pd:86W; Power Dissipation Pd:86W; Pulse Current Idm:38A; SMD Marking:IRFR9N20D; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

element14 APAC

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon