Infineon IRFR9N20DTRLPBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-07
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
Related Parts
Diodes Inc.DMN15H310SK3-13
MOSFET N-CH 150V 8.3A TO252 / N-Channel 150 V 8.3A (Tc) 32W (Ta) Surface Mount TO-252-3
Descriptions
Descriptions of Infineon IRFR9N20DTRLPBF provided by its distributors.
Single N-Channel 200 V 0.38 Ohm 18 nC HEXFET® Power Mosfet - TO-252AA
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):380mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)9.4 A
Current Rating9.4 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time9.3 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance560 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation86 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance380 mΩ
Package Quantity3000
Power Dissipation86 W
Rds On Max380 mΩ
Resistance380 mΩ
Rise Time16 ns
Turn-Off Delay Time13 ns
Turn-On Delay Time7.5 ns
Voltage Rating (DC)200 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements