onsemi FQD8P10TM-F085

Name: onsemi FQD8P10TM-F085
Brand: onsemi
SKU: FQD8P10TM-F085

P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak

$ 0.537

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	FQD8P10TM-F085	784	5	Cut Tape		1.160	0.923	0.781	0.781
Verical	2	FQD8P10TM_F085	4,950	150					0.537	0.524
Arrow Electronics		FQD8P10TM-F085	1,839	1		0.549	0.548	0.547	0.546	0.546
Future Electronics	3	FQD8P10TM-F085	10,000	2500	Tape & Reel					0.535
Master Electronics		FQD8P10TM-F085	4,950	50				0.479	0.456	0.436

Inventory History

3 month trend: -17.83%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQD8P10TM-F085.

Upverter

Technical Drawing1 page3 years ago

IHS

JRH Electronics

Future Electronics

Fairchild Semiconductor

Inventory History

3 month trend:

-17.83%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQD8P10TM-F085

onsemiFQD8P10TM

Price @ 1000

$ 0.537

$ 0.36

Stock

565,138

960,106

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

-100 V

Continuous Drain Current (ID)

6.6 A

Threshold Voltage

-4 V

Rds On Max

530 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

2.5 W

Input Capacitance

470 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-12-20

Lifecycle StatusProduction (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FQD8P10TM-F085 provided by its distributors.

P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak

Future Electronics

Trans MOSFET P-CH 100V 6.6A Automotive 3-Pin(2+Tab) DPAK T/R

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MOSFETs; FQD8P10TM-F085; ON SEMICONDUCTOR; -6.6 A; -100 V; 30 V; 2.5 W

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Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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onsemi

MOSFET, P-CH, 100V, 6.6A, TO-252;

Farnell

2.5W(Ta),44W(Tc) 30V 4V@ 250¦ÌA 15nC@ 10 V 1P 100V 530m¦¸@ 3.3A,10V 6.6A 470pF@25V TO-252AA 6.73mm*6.22mm*2.39mm

UnikeyIC

FQD8P10TM_F085 Fairchild/ON Semiconductor

YIC International

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Fairchild Semiconductor