onsemi FQD8P10TM

Name: onsemi FQD8P10TM
Brand: onsemi
SKU: FQD8P10TM

P-Channel Power MOSFET, QFET®, -100 V, -6.6 A, 530 mΩ, DPAK

$ 0.347

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet		FQD8P10TM	290,000	2500						0.273	4d
Newark	2	FQD8P10TM	6,440	5	Cut Tape		0.870	0.610	0.610	0.610
Verical	4	FQD8P10TM	12,500	2500						0.274
Arrow Electronics	4	FQD8P10TM	1,320	1		0.912	0.695	0.482	0.350	0.350
Rochester Electronics		FQD8P10TM	10,000					0.355	0.294	0.262	10h

Inventory History

3 month trend: +232%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQD8P10TM.

Upverter

Technical Drawing1 page3 years ago

Newark

IHS

Master Electronics

onsemi

Inventory History

3 month trend:

+232%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQD8P10TM

onsemiFQD8P10TM-F085

Price @ 1000

$ 0.347

$ 0.546

Stock

1,740,684

604,497

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

-100 V

Continuous Drain Current (ID)

6.6 A

Threshold Voltage

-4 V

Rds On Max

530 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

2.5 W

Input Capacitance

470 pF

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQD8P10TM provided by its distributors.

P-Channel Power MOSFET, QFET®, -100 V, -6.6 A, 530 mΩ, DPAK

onsemi

TRANSISTOR, P-CHANNEL, QFET MOSFET, -100V, -6.6A, 530 MOHM, 175C MAX, DPAK

RS (Formerly Allied Electronics)

P-Channel 100 V 0.53 Ohm Surface Mount Mosfet - TO-252-3

Future Electronics

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, P-CH, -100V, -6.6A, TO-252AA-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vg

element14 APAC

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor