onsemi FQD4N50TM
$ 0.395
Obsolete
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-12-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
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Descriptions
Descriptions of onsemi FQD4N50TM provided by its distributors.
Trans MOSFET N-CH 500V 2.6A 3-Pin(2+Tab) DPAK T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Power Field-Effect Transistor, 2.6A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)2.6 A
Current Rating2.6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance2.7 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance460 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max2.7 Ω
Resistance2.7 Ω
Rise Time45 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)500 V
Dimensions
Height2.3 mm
Length6.6 mm
Width6.1 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements