onsemi FQD1N60CTM

Name: onsemi FQD1N60CTM
Brand: onsemi
SKU: FQD1N60CTM

N-channel Power Mosfet, Qfet®, 600 V, 1 A, 11.5 Ω, Dpak

$ 0.251

EOL

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Distributor	SKU		Min	Pkg
Rochester Electronics	FQD1N60CTM	0					0.303	0.251	0.224	1d
element14 APAC	FQD1N60CTM	0	1		0.633*	0.501*	0.424*	0.310*	0.296*	4h
Farnell	FQD1N60CTM	0	1		0.599*	0.496*	0.435*	0.278*	0.278*	15h
Microchip USA	FQD1N60CTM	137	600	Tray				4.615	4.615	7h
Win Source	WS-FQD1N60CTM	10,000	6			8.731	5.821	5.821	5.821	16h

Inventory History

3 month trend: -100%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

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Farnell

Datasheet9 pages12 years ago

Datasheet0 pages0 years ago

IHS

onsemi

Newark

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Inventory History

3 month trend:

-100%

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Supply Chain

Lifecycle StatusEOL (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FQD1N60CTM provided by its distributors.

N-Channel Power MOSFET, QFET®, 600 V, 1 A, 11.5 Ω, DPAK

onsemi

N-Channel 600 V 11.5 Ohm Surface Mount Mosfet - TO-252-3

Future Electronics

MOSFET, N CH, 600V, 9.3OHM, 1A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:600V; On Resistance Rds(on):9.3ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:28W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

Farnell

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.