STMicroelectronics STD1HN60K3
$ 0.718
Production
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SKU
Min
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Inventory History
3 month trend: +22.25%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD1HN60K3.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-09
Lifecycle StatusProduction (Last Updated: 6 months ago)
Related Parts
STMicroelectronicsSTD1NK60T4
Power MOSFET, N Channel, 600 V, 500 mA, 8.5 ohm, TO-252 (DPAK), Surface Mount
STMicroelectronicsSTD4NK60ZT4
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in DPAK
Descriptions
Descriptions of STMicroelectronics STD1HN60K3 provided by its distributors.
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package
STD1HN60K3 N-channel MOSFET Transistor, 1.2 A, 600 V, 3-Pin DPAK
Power Field-Effect Transistor, 0.76A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
27W(Tc) 30V 4.5V@ 50µA 9.5nC@ 10 V 1individualNChannel 600V 8Ω@ 600mA,10V 1.2A 140pF@50V TO-252 SMD mount 6.6mm*6.2mm*2.4mm
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +22.25%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)760 mA
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance8 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance140 pF
Max Operating Temperature150 °C
Max Power Dissipation27 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation27 W
Rds On Max8 Ω
Resistance8 Ω
Rise Time10 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time7 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD1HN60K3.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant